Details

Autor(en) / Beteiligte

• Ayouchi, R.
• Bentes, L.
• Casteleiro, C.
• Conde, O.
• Marques, C.P.
• Alves, E.
• Moutinho, A.M.C.
• Marques, H.P.
• Teodoro, O.
• Schwarz, R.

Titel

Photosensitivity of nanocrystalline ZnO films grown by PLD

Ist Teil von

• Applied surface science, 2009-03, Vol.255 (11), p.5917-5921

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2O 3), under substrate temperatures around 400 °C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ–2 θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature.