Journal of sol-gel science and technology, 2008-08, Vol.47 (2), p.154-157
2008
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Details
- Autor(en) / Beteiligte
- Titel
- Large electric polarization in BiFeO3 film prepared via a simple sol–gel process
- Ist Teil von
- Journal of sol-gel science and technology, 2008-08, Vol.47 (2), p.154-157
- Ort / Verlag
- Boston: Springer US
- Erscheinungsjahr
- 2008
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- BiFeO 3 film has been deposited on Pt/Ti/SiO 2 /Si substrate by a simple sol–gel process annealed at 500 °C. X-ray diffraction analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section scanning electric microscopy results indicated that the thickness was about 600 nm. Large remanent polarization was observed. The double remanent polarization is 95.8 μC/cm 2 at an applied field of 800 kV/cm. Intense dielectric dispersion was observed above 100 kHz. At a biased electric field of 167 kV/cm, the leakage current densities were identified as ∼10 −5 to 10 −4 A/cm 2 .
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0928-0707eISSN: 1573-4846DOI: 10.1007/s10971-008-1773-5Titel-ID: cdi_proquest_miscellaneous_33560191
- Format
- –
- Schlagworte
- Bismuth ferrite, Ceramics, Chemistry, Chemistry and Materials Science, Colloidal gels. Colloidal sols, Colloidal state and disperse state, Composites, Crystallization, Electric fields, Electric polarization, Exact sciences and technology, General and physical chemistry, Glass, Inorganic Chemistry, Leakage current, Magnetism, Materials Science, Nanotechnology, Natural Materials, Optical and Electronic Materials, Original Paper, Silicon dioxide, Silicon substrates, Sol-gel processes, X-ray diffraction