Details

Autor(en) / Beteiligte

• Caldwell, Joshua D.
• Glembocki, Orest J.
• Stahlbush, Robert E.
• Hobart, Karl D.

Titel

Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes

Ist Teil von

• Journal of electronic materials, 2008-05, Vol.37 (5), p.699-705

Ort / Verlag

Boston: Springer US

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• While Shockley stacking fault (SSF) creation and expansion within 4H-SiC bipolar devices is well known, only recently was it observed that this expansion and the associated increase in the forward voltage drop ( V f ) could be completely reversed via low-temperature annealing. Here we report the temperature dependence of the recovery rate of the V f drift via annealing, reporting an activation energy of 1.3 ± 0.3 eV. The V f drift was observed to saturate following extended electrical stressing, and it was observed that the value of V f at this saturation was inversely proportional to the stressing temperature. We also observed that SSF and V f drift recovery could occur in highly stressed diodes at elevated temperatures even under high current injection conditions (14 A/cm 2 ).