Details

Autor(en) / Beteiligte

• TODOROV, T
• CARDA, J
• ESCRIBANO, P
• GRIMM, A
• KLAER, J
• KLENK, R

Titel

Electro deposited In2S3 buffer layers for CuInS2 solar cells

Ist Teil von

• Solar energy materials and solar cells, 2008-10, Vol.92 (10), p.1274-1278

Ort / Verlag

Amsterdam: Elsevier

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report the electro deposition of In2S3 buffer layers for CuInS2 solar cells. All materials and deposition conditions were selected taking into account environmental, economic and technological aspects of a potential transfer to large volume industrial production. Different bath compositions and electro deposition parameters were studied. The obtained films exhibited complete substrate coverage, confirmed by SEM and XPS. In/S ratio close to 2/3 was obtained. XPS measurements detected the presence of indium hydroxide, transforming into oxide upon anneal at 200 deg C. Maximum photoelectric conversion efficiency of 7.1% was obtained, limited mainly by a low fill factor (51%). Further process optimization is expected to lead to efficiencies comparable to CdS buffers. So far, open-circuit voltages as high as 660 mV were demonstrated.