Physica status solidi. C, 2008-07, Vol.5 (9), p.3162-3164
2008
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Details
- Autor(en) / Beteiligte
- Titel
- A 5.15-5.35 GHz band 10 W power amplifier using SiC MESFETs
- Ist Teil von
- Physica status solidi. C, 2008-07, Vol.5 (9), p.3162-3164
- Ort / Verlag
- Berlin: WILEY-VCH Verlag
- Erscheinungsjahr
- 2008
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- A 10 watt radio frequency power amplifier using commercially available silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs), Cree CRF‐24010F, was designed. The frequency range covers 5.15 GHz to 5.35 GHz for using IEEE 802.11a Wireless Local Area Network (WLAN) applications. The 2nd and 3rd order harmonics cancellation technique was introduced to obtain high linearity. A cascade topology was employed to increase small signal gain, isolation, and stability throughout the bandwidth. At VDS1 = VDS2 = 48 V and IDS1 + IDS2 = 871 mA, 11 ± 1 dB power gain, 40 dBm (10 W) output power and 32.5% power added efficiency (PAE) over the operating bandwidth have been achieved in the two stage design. Two‐tone simulation at frequency spacing of 10 MHz was also done and output 3rd order intercept point (OIP3) of 49 dBm was obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)