Details

Autor(en) / Beteiligte

• MORTON, M. A
• COMEAU, J. P
• CRESSLER, J. D
• MITCHELL, M
• PAPAPOLYMEROU, J

Titel

5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

Ist Teil von

• IET microwaves, antennas & propagation, 2008-02, Vol.2 (1), p.19-22

Ort / Verlag

Stevenage: Institution of Engineering and Technology

Erscheinungsjahr

2008

Beschreibungen/Notizen

• A hybrid pi/t bit passive topology is presented to enable a significant reduction in the die area for a high-pass/low-pass phase shifter is presented. A hybrid-topology 5 bit digital X-band phase shifter was designed, fabricated and tested using a 200 GHz, 0.13 mm SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology. Size and performance characteristics are presented as a contrast to an all-pi phase shifter recently presented by Comeau et al using the same SiGe BiCMOS technology and design goals. With similar bit passive performance to the all-pi design, the hybrid shifter allows for a total shifter die-area reduction of 50.5%. The absolute phase error of the shifter was less than ±13 from 8 to 12 GHz, with an average insertion loss of -20 dB.