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We have synthesized Ga
1−
x
Mn
x
As
1−
y
P
y
and Ga
1−
x
Mn
x
P
1−
y
N
y
by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga
1−
x
Mn
x
P
1−
y
N
y
/GaP and Ga
1−
x
Mn
x
As
1−
y
P
y
/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga
1−
x
Mn
x
As grown on larger lattice constant (In, Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III–Mn–V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga
1−
x
Mn
x
As
1−
y
P
y
with increasing
y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases.