Details

Autor(en) / Beteiligte

• Wei, Hung-Ju
• Meng, Chinchun
• Chang, YuWen
• Huang, Guo-Wei

Titel

Comparison of GAINP/GAAS HBT RFDS with resistive loads and shunt-shunt feedback active loads

Ist Teil von

• Microwave and optical technology letters, 2008-02, Vol.50 (2), p.433-435

Ort / Verlag

Hoboken: Wiley Subscription Services, Inc., A Wiley Company

Erscheinungsjahr

2008

Quelle

Wiley Blackwell Single Titles

Beschreibungen/Notizen

• An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The fmax/fmin ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V. The chip size is 1.0 × 1.0 mm2. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 433–435, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23096