Details

Autor(en) / Beteiligte

• Niu, Y. H.
• Munro, A. M.
• Cheng, Y.-J.
• Tian, Y. Q.
• Liu, M. S.
• Zhao, J. L.
• Bardecker, J. A.
• Jen-La Plante, I.
• Ginger, D. S.
• Jen, A. K.-Y.

Titel

Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer

Ist Teil von

• Advanced materials (Weinheim), 2007-10, Vol.19 (20), p.3371-3376

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2007

Link zum Volltext

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.