Details

Autor(en) / Beteiligte

• Fang, Ren-Zhou
• Lai, Xiao-Yi
• Li, Tao
• Su, Ren-Zhu
• Lu, Bo-Wei
• Yang, Chao-Wei
• Liu, Run-Ze
• Qiao, Yu-Kun
• Li, Cheng
• He, Zhi-Gang
• Huang, Jia
• Li, Hao
• You, Li-Xing
• Huo, Yong-Heng
• Bao, Xiao-Hui
• Pan, Jian-Wei

Titel

Experimental Generation of Spin-Photon Entanglement in Silicon Carbide

Ist Teil von

• Physical review letters, 2024-04, Vol.132 (16), p.160801-160801

Ort / Verlag

United States

Erscheinungsjahr

2024

Link zum Volltext

Quelle

American Physical Society Journals

Beschreibungen/Notizen

• A solid-state approach for quantum networks is advantageous, as it allows the integration of nanophotonics to enhance the photon emission and the utilization of weakly coupled nuclear spins for long-lived storage. Silicon carbide, specifically point defects within it, shows great promise in this regard due to the easy of availability and well-established nanofabrication techniques. Despite of remarkable progresses made, achieving spin-photon entanglement remains a crucial aspect to be realized. In this Letter, we experimentally generate entanglement between a silicon vacancy defect in silicon carbide and a scattered single photon in the zero-phonon line. The spin state is measured by detecting photons scattered in the phonon sideband. The photonic qubit is encoded in the time-bin degree of freedom and measured using an unbalanced Mach-Zehnder interferometer. Photonic correlations not only reveal the quality of the entanglement but also verify the deterministic nature of the entanglement creation process. By harnessing two pairs of such spin-photon entanglement, it becomes straightforward to entangle remote quantum nodes at long distance.