Details

Autor(en) / Beteiligte

• Hu, Guojing
• Guo, Hui
• Lv, Senhao
• Li, Linxuan
• Wang, Yunhao
• Han, Yechao
• Pan, Lulu
• Xie, Yulan
• Yu, Weiqi
• Zhu, Ke
• Qi, Qi
• Xian, Guoyu
• Zhu, Shiyu
• Shi, Jinan
• Bao, Lihong
• Lin, Xiao
• Zhou, Wu
• Yang, Haitao
• Gao, Hong‐jun

Titel

Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe3GaTe2 Nanosheets

Ist Teil von

• Advanced materials (Weinheim), 2024-07, Vol.36 (27), p.e2403154-n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2024

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high‐quality room‐temperature ferromagnet, Fe3GaTe2 (c‐Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room‐temperature antisymmetric magnetoresistance (MR) is first observed in c‐Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room‐temperature thickness‐controlled antisymmetric MR and further design room‐temperature 2D spintronic devices based on the vdW ferromagnet c‐Fe3GaTe2. A high‐quality room‐temperature ferromagnetic material Fe3GaTe2 is synthesized by the chemical vapor transport method. An unconventional room‐temperature antisymmetric magnetoresistance is observed in 2D Fe3GaTe2 devices with the planar symmetry breaking. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room‐temperature thickness‐controlled antisymmetric magnetoresistance.