Journal of crystal growth, 2007-09, Vol.307 (2), p.298-301
2007
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Details
- Autor(en) / Beteiligte
- Titel
- The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy
- Ist Teil von
- Journal of crystal growth, 2007-09, Vol.307 (2), p.298-301
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2007
- Quelle
- Access via ScienceDirect (Elsevier)
- Beschreibungen/Notizen
- Large areas of electrically active regions of in-homogeneities have been revealed by the electroless photo-etching (PEC) method in GaN layers grown by the hydride vapor phase epitaxy (HVPE) technique. Variations in the local etch rate have been correlated with the variations in the free-carrier concentrations as determined by micro-Raman spectroscopy. The etch rate decreased linearly with the log of the carrier concentration. The latter could change by more than two orders of magnitude on the same sample.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0022-0248eISSN: 1873-5002DOI: 10.1016/j.jcrysgro.2007.07.019Titel-ID: cdi_proquest_miscellaneous_30134049
- Format
- –
- Schlagworte
- A1. Defects, A1. Etching, A3. Hydride vapor phase epitaxy, Applied sciences, B1. Nitrides, Cross-disciplinary physics: materials science, rheology, Electronics, Exact sciences and technology, Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Microelectronic fabrication (materials and surfaces technology), Physics, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Vapor phase epitaxy, growth from vapor phase