Details

Autor(en) / Beteiligte

• BRAMBILLA, A
• SESSI, P
• DUO, L
• FINAZZI, M
• CABANILLAS-GONZALEZ, J
• EGELHAAF, H.-J
• LANZANI, G
• CICCACCI, F

Titel

Early stages of interface formation of C60 on GaAs(100)

Ist Teil von

• Surface science, 2007-09, Vol.601 (18), p.4078-4081

Ort / Verlag

Lausanne: Elsevier Science

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present a detailed investigation of the electronic properties of C60 grown on GaAs(100) substrates, as a function of the fullerene coverage, from the very early stages of interface formation up to the development of a bulk-like fullerene film. We monitor the chemical interactions and the energy levels alignment by means of X-rays, ultraviolet and inverse photoemission spectroscopies. The two latter techniques allow to investigate the electronic structure close to the Fermi level. Energy levels alignment at the interfaces of C60 with p-doped and GaAs(100) are obtained and discussed.