Details

Autor(en) / Beteiligte

• Gediga, S.
• Mitlehner, Heinz
• Bartsch, Wolfgang

Titel

Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects

Ist Teil von

• Materials science forum, 2007-01, Vol.556-557, p.889-894

Ort / Verlag

Trans Tech Publications Ltd

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.