Details

Autor(en) / Beteiligte

• YANG, P. C
• PRATER, J. T
• LIU, W
• GLASS, J. T
• DAVIS, R. F

Titel

The formation of epitaxial hexagonal boron nitride on nickel substrates

Ist Teil von

• Journal of electronic materials, 2005-12, Vol.34 (12), p.1558-1564

Ort / Verlag

New York, NY: Institute of Electrical and Electronics Engineers

Erscheinungsjahr

2005

Quelle

SpringerNature Journals

Beschreibungen/Notizen

• The various crystallographic forms of boron nitride (BN) are of great technological interest because of their demonstrated tribological, high-temperature, thermally conducting, electrically insulating, and wide-bandgap semiconductor properties. Unfortunately, the synthesis of crystalline BN films is still in the early stages of development. Furthermore, although polycrystalline BN films have been prepared by a variety of physical and chemical vapor deposition techniques, the capability does not currently exist for depositing large area single-crystal or oriented films of BN. Such single-crystal films are required for many applications of interest, especially in electronics. The present paper reports on a new approach to the oriented growth of boron nitride using a novel molten layer epitaxy technique. Well-oriented hexagonal boron nitride (h-BN) crystals were obtained with highly faceted crystal shapes. The h-BN was formed via precipitation from a molten, hydrogen-saturated Ni surface layer. Solid cubic BN was utilized as the source material and was dissolved into the substrate surface during a brief high-temperature anneal. It was found that surface melting occurred during this process and the B diffused into the Ni substrate, whereas the N was expelled into the growth chamber. Oriented BN was then precipitated as the surface layer was allowed to resolidify. [PUBLICATION ABSTRACT]