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Retention of the Goss orientation between microbands during cold rolling of an Fe3%Si single crystal
Ist Teil von
Acta materialia, 2007-04, Vol.55 (7), p.2519-2530
Ort / Verlag
Oxford: Elsevier Ltd
Erscheinungsjahr
2007
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
An FeSi single crystal with an initial {1
1
0}〈0
0
1〉 orientation, also referred to as Goss orientation, was cold rolled up to a thickness reduction of 89%. Most of the crystal volume rotated into the two symmetrical {1
1
1}〈1
1
2〉 orientations. However, a weak Goss component remained in the highly strained material, even though the Goss orientation is mechanically unstable under plane strain loading. Two types of Goss-oriented regions were discernable in the material subjected to 89% reduction. It appeared that these two types of Goss regions have different origins. Goss grains that were found aligned in shear bands form during straining. A second type of Goss region was found between microbands where the initial Goss orientation was retained.