Journal of crystal growth, 2007-04, Vol.301, p.177-180
2007
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Details
- Autor(en) / Beteiligte
- Titel
- Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy
- Ist Teil von
- Journal of crystal growth, 2007-04, Vol.301, p.177-180
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2007
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- Room temperature photoreflectance (PR) has been performed on InGaAs/AlAsSb quantum wells (QWs) grown on InP substrates. Using a differential reflectance setup, we observed clear and well-resolved structures, which could be attributed to the interband optical transitions originating in both the QWs and InP substrate. The transition energies measured from the PR spectra agree with those theoretically calculated from the confined levels in the QWs.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0022-0248eISSN: 1873-5002DOI: 10.1016/j.jcrysgro.2006.11.070Titel-ID: cdi_proquest_miscellaneous_29910561
- Format
- –
- Schlagworte
- A1. Photoreflectance, A3. Quantum wells, B1. InGaAs/AlAsSb, Cross-disciplinary physics: materials science, rheology, Exact sciences and technology, Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Molecular, atomic, ion, and chemical beam epitaxy, Nanoscale materials and structures: fabrication and characterization, Other topics in nanoscale materials and structures, Physics