Journal of crystal growth, 2007-04, Vol.301, p.71-74
2007
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Details
- Autor(en) / Beteiligte
- Titel
- In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
- Ist Teil von
- Journal of crystal growth, 2007-04, Vol.301, p.71-74
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2007
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- In this work we show how in situ measurements of wafer curvature helps for monitoring the strain relaxation in group-III-nitride layers grown by molecular beam eptixay on silicon. In particular, we show the efficiency of GaN/AlN interlayers for growing high quality AlGaN/GaN heterostructures with residual stress that largely compensates the one appearing upon cooling down to room temperature.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0022-0248eISSN: 1873-5002DOI: 10.1016/j.jcrysgro.2006.11.126Titel-ID: cdi_proquest_miscellaneous_29902132
- Format
- –
- Schlagworte
- A1. In situ monitoring, A1. Stresses, A3. Molecular beam epitaxy, B1. Group-III-nitrides, B2. GaN, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Exact sciences and technology, Materials science, Mechanical and acoustical properties, Methods of deposition of films and coatings, film growth and epitaxy, Molecular, atomic, ion, and chemical beam epitaxy, Physical properties of thin films, nonelectronic, Physics, Surfaces and interfaces, thin films and whiskers (structure and nonelectronic properties), Theory and models of film growth