Details

Autor(en) / Beteiligte

• Puzzilli, G.
• Irrera, F.

Titel

Long time transients in hafnium oxide

Ist Teil von

• Microelectronic engineering, 2007-09, Vol.84 (9), p.2394-2397

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this work characterization of HfO 2 films in transient regime is presented. Charge trapping and detrapping, and degradation transients were investigated at long times while monitoring gate current or voltage. As for charge trapping, a logarithmic dependence on time was found. The entity of the external perturbation inducing degradation was influenced by the HfO 2thickness. The detrapping rate was systematically studied as a function of pulse features and film thickness, and was found to depend only on the HfO 2 thickness, with a power law behavior as a function of time.