Diamond and related materials, 2007-04, Vol.16 (4), p.1033-1037
2007
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Details
- Autor(en) / Beteiligte
- Titel
- Diamond merged diode
- Ist Teil von
- Diamond and related materials, 2007-04, Vol.16 (4), p.1033-1037
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2007
- Quelle
- Access via ScienceDirect (Elsevier)
- Beschreibungen/Notizen
- To obtain high blocking voltages and low forward losses in power diode structures, a Schottky contact can be merged with a MIS contact or a pn-junction. In this configuration, the Schottky contact is responsible for a low forward threshold voltage and the MIS or pn-junction for a low reverse leakage current and a high breakdown voltage. In this study, a diamond merged diode structure has been fabricated and evaluated, containing simultaneously an Al or W:Si-Schottky contact and a boron/nitrogen pn-junction. The IV characteristics show a low forward barrier of 1.5 eV, a current rectification ratio of 10 9 at R.T., and a reverse breakdown at 2.5 MV/cm. Rectification has been obtained up to 1000 °C (in vacuum).
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0925-9635eISSN: 1879-0062DOI: 10.1016/j.diamond.2006.12.060Titel-ID: cdi_proquest_miscellaneous_29769959
- Format
- –
- Schlagworte
- Applied sciences, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Cross-disciplinary physics: materials science, rheology, Diamond, Diodes, Electrical properties of specific thin films, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronics, Exact sciences and technology, Fullerenes and related materials, diamonds, graphite, Materials science, Merged diode, Physics, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Specific materials