Physica status solidi. C, 2007-04, Vol.4 (5), p.1739-1742
2007
Details
- Autor(en) / Beteiligte
- Titel
- Blue-shift of phosphorous-implanted InGaAs/InGaAsP MQW laser structures by two-step anneals
- Ist Teil von
- Physica status solidi. C, 2007-04, Vol.4 (5), p.1739-1742
- Ort / Verlag
- Berlin: WILEY-VCH Verlag
- Erscheinungsjahr
- 2007
- Link zum Volltext
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- We describe studies of implantation‐enhanced quantum‐well intermixing in a lattice‐matched InGaAs/InGaAsP multiple quantum well p‐i‐n heterostructure. Samples were implanted with a dose of 5×1014 P+ ions /cm2 at high energy of 1 MeV. The band gap for the samples was determined from photoluminescence at room temperature. The maximum blue‐shift of the band gap was 107 nm after the RTA process at 675 °C for 9 minutes. However, it was improved to 140 nm after two‐step anneals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)