Details

Autor(en) / Beteiligte

• SONG, Z. X
• WANG, Y
• WANG, C. J. F
• LIU, C. L
• XU, K. W

Titel

The effect of N2 partial pressure on the properties of Nb-Si-N films by RF reactive magnetron sputtering

Ist Teil von

• Surface & coatings technology, 2007-02, Vol.201 (9-11), p.5412-5415

Ort / Verlag

Lausanne: Elsevier

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Nb-Si-N films were sputtered by RF reactive magnetron sputtering with various N2 partial pressure in argon and nitrogen gas mixture. The characterizers of Nb-Si-N films were performed with energy dispersive spectroscopy, four-point probe method, X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope, and transmission electron microscope, respectively. The results reveal that the Nb/Si ratio of Nb-Si-N films decreases as N2 partial pressure increases. The microstructure of Nb-Si-N films is of a nano-composite that consists of amorphous SiNx phase and nano-sized NbN crystallites embedding in amorphous SiNx matrix. When sputtered with high N2 partial pressure there is more amorphous SiNx phase in Nb-Si-N films and the grain size of NbN decreases. High N2 partial pressure is in favor of the growth of hcp epsilon-NbN phase in the Nb-Si-N films. The value of surface roughness of Nb-Si-N films decreases as N2 partial pressure increases.