Details

Autor(en) / Beteiligte

• Segal, A.S.
• Kondratyev, A.V.
• Karpov, S.Yu
• Martin, D.
• Wagner, V.
• Ilegems, M.

Titel

Surface chemistry and transport effects in GaN hydride vapor phase epitaxy

Ist Teil von

• Journal of crystal growth, 2004-10, Vol.270 (3-4), p.384-395

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2004

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A simple quasi-thermodynamic model of surface chemistry in GaN hydride vapor phase epitaxy (HVPE) is presented. The model is coupled with the detailed 3D simulations of species transport in a horizontal-tube reactor and validated by the comparison with the data on the GaN growth rate obtained by laser reflectometry. Parametric study of the growth rate as a function of temperature and species flow rates has been performed over a wide range of growth conditions. The important role of species transport in an HVPE reactor is demonstrated. In particular, a strong effect of the natural concentration convection resulting in the formation of recirculation zones and in a non-uniform vapor composition is revealed by modeling. The impact of these effects on the GaN growth rate and V/III ratio on the growth surface is discussed in detail.