Details

Autor(en) / Beteiligte

• Liang, H. W.
• Lu, Y. M.
• Shen, D. Z.
• Liu, Y. C.
• Yan, J. F.
• Shan, C. X.
• Li, B. H.
• Zhang, Z. Z.
• Zhang, J. Y.
• Fan, X. W.

Titel

P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

Ist Teil von

• Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (6), p.1060-1065

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2005

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• N‐doped p‐type ZnO thin films were grown by plasma molecular beam epitaxy (P‐MBE) on c‐plane sapphire (Al2O3) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (NA – ND) of 1.2 × 1018 cm–3 and minimum resistivity of 9.36 Ω cm. The influence of N incorporation on the quality of the ZnO thin films was studied using X‐ray diffraction and absorption spectra. The photoluminescence spectra at 77 K of p‐type ZnO thin films are dominated by the emission from donor–acceptor pair recombination. The formation mechanism of p‐type ZnO is explained by the optical emission spectra of radical N2 and radical NO. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)