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In this study, two different types of internal linear antennas were compared and their characteristics were investigated for a large area ICPs applied to FPD processing. The measured plasma density for the double comb-type antenna was higher than 2
×
10
11/cm
3 and the etch rates of photoresist and SiO
2 at 5000 W rf power, −
60 V of dc-bias voltage, and 15 mTorr SF
6 were about 3000 Å/min and 1500 Å/min. The etch non-uniformity of the photoresist within the substrate was about 7% at 5000 W of rf power.