Details

Autor(en) / Beteiligte

• Dinelli, F.
• Capelli, R.
• Loi, M. A.
• Murgia, M.
• Muccini, M.
• Facchetti, A.
• Marks, T. J.

Titel

High-Mobility Ambipolar Transport in Organic Light-Emitting Transistors

Ist Teil von

• Advanced materials (Weinheim), 2006-06, Vol.18 (11), p.1416-1420

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2006

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• Organic light‐emitting transistors based on bilayered structures (see figure) exhibit balanced ambipolar transport and mobility values as large as 3 × 10–2 cm2 V–1 s–1. The best performances are realized by sequentially depositing α,ω‐dihexyl‐quaterthiophene (DH4T) as p‐type and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13) as n‐type materials. Laser‐scanning confocal microscopy allows selective imaging of the layers.