Details

Autor(en) / Beteiligte

• Vassilevski, K.V.
• Nikitina, I.P.
• Wright, N.G.
• Horsfall, A.B.
• O’Neill, A.G.
• Johnson, C.M.

Titel

Device processing and characterisation of high temperature silicon carbide Schottky diodes

Ist Teil von

• Microelectronic engineering, 2006, Vol.83 (1), p.150-154

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2006

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• High temperature silicon carbide diodes with nickel silicide Schottky contacts were fabricated by deposition of titanium–nickel metal film on 4H-SiC epitaxial wafer followed by annealing at 550 °C in vacuum. Room temperature boron implantation have been used to form single zone junction termination extension. 4H-SiC epitaxial structures designed to have theoretical parallel-plain breakdown voltages of 1900 and 3600 V have been used for this research. The diodes revealed soft recoverable avalanche breakdown at voltages of 1450 and 3400 V, respectively, which are about 80% and 95% of theoretical values. I– V characteristics of fabricated 4H-SiC Schottky diodes have been measured at temperatures from room temperature up to 400 °C. The diodes revealed unchangeable barrier heights and ideality factors as well as positive coefficients of breakdown voltage.