Journal of crystal growth, 2006-05, Vol.291 (1), p.148-153
2006
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Details
- Autor(en) / Beteiligte
- Titel
- Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(1 0 0)
- Ist Teil von
- Journal of crystal growth, 2006-05, Vol.291 (1), p.148-153
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2006
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- A series of low-pressure chemical vapor deposition experiments and gas-surface chemical kinetic simulations have been carried out to achieve significant reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(1 0 0) substrates. A two-step epitaxial process, consisting of a nucleation stage and a subsequent epitaxial stage, was newly proposed by comparisons between experimental results and numerical predictions. The twin formation was successfully suppressed under the growth conditions of the nucleation stage leading to a relative flux ratio of C to Si larger than 56 on the deposition surface. The surface protrusion density was decreased from 7.5×10 6 to 6.5×10 4 cm −2 when the conventional carbonization process was replaced with the proposed nucleation stage.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0022-0248eISSN: 1873-5002DOI: 10.1016/j.jcrysgro.2006.03.009Titel-ID: cdi_proquest_miscellaneous_29181593
- Format
- –
- Schlagworte
- A1. Crystal morphology, A1. Growth models, A1. Planar defects, A1. Reflection high-energy electron diffraction, A3. Chemical vapor deposition process, B2. Semiconducting silicon compounds, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Defects and impurities in crystals, microstructure, Exact sciences and technology, Grain and twin boundaries, Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Physics, Structure of solids and liquids, crystallography, Theory and models of film growth