Details

Autor(en) / Beteiligte

• Fu, L.
• Liu, Y. Q.
• Liu, Z. M.
• Han, B. X.
• Cao, L. C.
• Wei, D. C.
• Yu, G.
• Zhu, D. B.

Titel

Carbon Nanotubes Coated with Alumina as Gate Dielectrics of Field-Effect Transistors

Ist Teil von

• Advanced materials (Weinheim), 2006-01, Vol.18 (2), p.181-185

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2006

Quelle

Wiley Online Library

Beschreibungen/Notizen

• Based on a simple low‐temperature chemical‐solution method, multiwalled carbon nanotubes (MWCNTs) are coated discontinuously with a alumina gate‐dielectric shell (see Figure) and application as p‐type field‐effect transistors is demonstrated. With a coating thickness of 8 nm, the drain current exceeds the gate current by a factor of 104–105, confirming the excellent gate insulation provided by the alumina dielectric.