Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Reconfigurable optical devices hold great promise for advancing high‐density optical interconnects, photonic switching, and memory applications. While many optical modulators based on active materials have been demonstrated, it is challenging to achieve a high modulation depth with a low operation voltage in the near‐infrared (NIR) range, which is a highly sought‐after wavelength window for free‐space communication and imaging applications. Here, electrically switchable Tamm plasmon coupled with poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is introduced. The device allows for a high modulation depth across the entire NIR range by fully absorbing incident light even under epsilon near zero conditions. Optical modulation exceeding 88% is achieved using a CMOS‐compatible voltage of ±1 V. This modulation is facilitated by precise electrical control of the charge carrier density through an electrochemical doping/dedoping process. Additionally, the potential applications of the device are extended for a non‐volatile multi‐memory state optical device, capable of rewritable optical memory storage and exhibiting long‐term potentiation/depression properties with neuromorphic behavior.
Electrically controllable Tamm plasmon coupled with poly (3,4‐ethylene‐dioxythiophene):polystyrene sulfonate signifies a breakthrough in optical switching, achieving a modulation depth surpassing 88% (≈99% theoretically) in the near‐infrared range at sub‐1‐volt levels. This device holds the potential to accelerate advancements in scalable optical modulators and non‐volatile multi‐memory state optical devices. Consequently, it extends applications to rewritable optical memory storage with neuromorphic behavior.