Details

Autor(en) / Beteiligte

• Criswell, Scott G.
• Mahadik, Nadeemullah A.
• Gallagher, James C.
• Barnett, Julian
• Kim, Luke
• Ghorbani, Morvarid
• Kamaliya, Bhaveshkumar
• Bassim, Nabil D.
• Taubner, Thomas
• Caldwell, Joshua D.

Titel

Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide

Ist Teil von

• Nano letters, 2024-01, Vol.24 (1), p.114-121

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2024

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Extended defects in wide-bandgap semiconductors have been widely investigated using techniques providing either spectroscopic or microscopic information. Nano-Fourier transform infrared spectroscopy (nano-FTIR) is a nondestructive characterization method combining FTIR with nanoscale spatial resolution (∼20 nm) and topographic information. Here, we demonstrate the capability of nano-FTIR for the characterization of extended defects in semiconductors by investigating an in-grown stacking fault (IGSF) present in a 4H-SiC epitaxial layer. We observe a local spectral shift of the mid-infrared near-field response, consistent with the identification of the defect stacking order as 3C-SiC (cubic) from comparative simulations based on the finite dipole model (FDM). This 3C-SiC IGSF contrasts with the more typical 8H-SiC IGSFs reported previously and is exemplary in showing that nanoscale spectroscopy with nano-FTIR can provide new insights into the properties of extended defects, the understanding of which is crucial for mitigating deleterious effects of such defects in alternative semiconductor materials and devices.