Details

Autor(en) / Beteiligte

• Chen, Chun-Yuan
• Cheng, Shiou-Ying
• Chiou, Wen-Hui
• Chuang, Hung-Ming
• Liu, Rong-Chau
• Yen, Chih-Hung
• Chen, Jing-Yuh
• Cheng, Chin-Chuan
• Liu, Wen-Chau

Titel

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

Ist Teil von

• IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.874-879

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2003

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• The dc performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10/sup -12/ to 10/sup -1/ A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9/spl times/10/sup -12/ A (1.56 /spl times/10/sup -7/ A/cm/sup 2/). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.