Details

Autor(en) / Beteiligte

• Lang, M
• Wang, Zhi-Gong
• Lao, Zhihao
• Schlechtweg, N
• Thiede, A
• Rieger-Motzer, M
• Sedler, N
• Bronner, W
• Kaufel, G
• Kohler, K
• Hulsmann, A
• Raynor, B

Titel

20-40 Gb/s 0.2- mu m GaAs HEMT chip set for optical data receiver

Ist Teil von

• IEEE journal of solid-state circuits, 1997-09, Vol.32 (9), p.1384-1393

Erscheinungsjahr

1997

Link zum Volltext

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Using our 0.2-mum AlGaAs-GaAs-AlGaAs quantum well high electron mobility transistor (HEMT) technology, we have developed a chip set for 20-40 Gb/s fiber-optical digital transmission systems. In this paper we describe five receiver chips: a limiting amplifier with a differential gain of 17 dB and a 3 dB bandwidth of 29.3 GHz, a 40 Gb/s clock recovery, a data decision and a 1:4 demultiplexer, both for bit rates of more than 40 Gb/s, and a static 1:4 divider with operating frequencies up to 30 GHz. All presented chips were characterized on wafer with 50-Omicron coplanar test probes