Details

Autor(en) / Beteiligte

• Karna, S P
• Pugh, R D
• Chavez, J R
• Shedd, W
• Brothers, C P
• Singaraju, B K
• Vitiello, M
• Pacchioni, G
• Devine, R A B

Titel

Microscopic mechanisms of radiation-induced proton density decay in SiO(2) films

Ist Teil von

• IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2408-2412

Erscheinungsjahr

1998

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• In order to understand the physics of radiation-induced proton density decay in thin SiO(2) films, we performed ab initio Hartree-Fock calculations of the potential energy curves for the interaction between model oxide clusters and H in two charge states. The calculated results led to two separate proposed mechanisms for proton density decay in thin SiO(2) films: (1) electronic excitation involving hot phonon levels of the ground electronic state at low photon-energy radiation and (2) electron capture by protons at high photon-energy radiation. The proposed mechanisms qualitatively explain recent experimental observations