Details

Autor(en) / Beteiligte

• Feng, Ping-Hsuan
• Hsiao, Kai-Yuan
• Jhan, Dun-Jie
• Chen, Yu-Lin
• Keng, Pei Yuin
• Chang, Shou-Yi
• Lu, Ming-Yen

Titel

Unleashing the Power of 2D MoS2: In Situ TEM Study of Its Potential as Diffusion Barriers in Ru Interconnects

Ist Teil von

• ACS applied materials & interfaces, 2023-10, Vol.15 (41), p.48543-48550

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This study presents the utilization of MoS2 as a diffusion barrier for metal interconnects, in situ transmission electron microscopy (TEM) observations are employed for comprehensive understanding. The diffusion-blocking ability of MoS2 is discussed by the diffusion and phase transformation between Ru and Si via TEM diffraction and imaging. When the sample is heated to a high temperature such that MoS2 loses the ability to block the diffusion, Si diffuses through the MoS2 into the Ru layer, leading to the formation of Ru2Si3. Both multilayer and monolayer (1L) MoS2 exhibit exceptional diffusion-blocking ability up to 800 °C. Furthermore, plasma-treated 1L-MoS2 shows a slightly low diffusion-blocking temperature of 750 °C, while the dangling bonds in MoS2 improve the interfacial adhesion. These findings suggest that MoS2 holds great potential as a diffusion barrier for metal interconnects.