Details

Autor(en) / Beteiligte

• Giannini, Samuele
• Di Virgilio, Lucia
• Bardini, Marco
• Hausch, Julian
• Geuchies, Jaco J
• Zheng, Wenhao
• Volpi, Martina
• Elsner, Jan
• Broch, Katharina
• Geerts, Yves H
• Schreiber, Frank
• Schweicher, Guillaume
• Wang, Hai I
• Blumberger, Jochen
• Bonn, Mischa
• Beljonne, David

Titel

Transiently delocalized states enhance hole mobility in organic molecular semiconductors

Ist Teil von

• Nature materials, 2023-11, Vol.22 (11), p.1361-1369

Ort / Verlag

London: Nature Publishing Group

Erscheinungsjahr

2023

Quelle

Springer Nature - Connect here FIRST to enable access

Beschreibungen/Notizen

• Evidence shows that charge carriers in organic semiconductors self-localize because of dynamic disorder. Nevertheless, some organic semiconductors feature reduced mobility at increasing temperature, a hallmark for delocalized band transport. Here we present the temperature-dependent mobility in two record-mobility organic semiconductors: dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene (DNTT) and its alkylated derivative, C8-DNTT-C8. By combining terahertz photoconductivity measurements with atomistic non-adiabatic molecular dynamics simulations, we show that while both crystals display a power-law decrease of the mobility (μ) with temperature (T) following μ ∝ T−n, the exponent n differs substantially. Modelling reveals that the differences between the two chemically similar semiconductors can be traced to the delocalization of the different states that are thermally accessible by charge carriers, which in turn depends on their specific electronic band structure. The emerging picture is that of holes surfing on a dynamic manifold of vibrationally dressed extended states with a temperature-dependent mobility that provides a sensitive fingerprint for the underlying density of states.Dynamic disorder reduces the carrier mobility in organic semiconductors (OSs) to an extent that depends on their specific electronic band structure. Here the authors study the temperature-dependent hole mobility of two structurally similar OSs and find that thermal access to transiently delocalized states enhances hole mobility in C8-DNTT-C8 compared to DNTT.