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We present an optical spectroscopic study of InGaAs/AlInAs active region of quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated by reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties of structures before and after processing the gratings. Our results demonstrate a significant increase of the photoluminescence intensity related to intersubband transitions in the mid-infrared, which is attributed to coupling with the grating modes via so called photonic Fano resonances. Our findings demonstrate a promising method for enhancing the emission in optoelectronic devices operating in a broad range of application-relevant infrared.
Sprache
Englisch
Identifikatoren
ISSN: 1094-4087
eISSN: 1094-4087
DOI: 10.1364/OE.496261
Titel-ID: cdi_proquest_miscellaneous_2865785956
Format
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