Details

Autor(en) / Beteiligte

• ORANI, D
• PICCIN, M
• RUBINI, S
• PELUCCHI, E
• BONANNI, B
• FRANCIOSI, A
• PASSASEO, A
• CINGOLANI, R
• KHAN, A

Titel

Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 x 1 surfaces

Ist Teil von

• Physica status solidi. A, Applied research, 2005, Vol.202 (5), p.804-807

Ort / Verlag

Berlin: Wiley-VCH

Erscheinungsjahr

2005

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• GaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, Al/n-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61 - 0.06 and 0.98 - 0.06 eV, respectively, for the two types of epitaxial junctions.