Details

Autor(en) / Beteiligte

• Zaleski, A.
• Sinha, S.P.
• Ioannou, D.E.
• Campisi, G.J.
• Hughes, H.L.

Titel

Opposite-channel-based charge injection in SOI MOSFET's under hot carrier stress

Ist Teil von

• IEEE transactions on electron devices, 1995-09, Vol.42 (9), p.1697-1700

Ort / Verlag

IEEE

Erscheinungsjahr

1995

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• By operating one channel of a typical SOI MOSFET in avalanche while keeping the opposite channel accumulated, charge injection into the opposite gate takes place. Three independent experiments are described that demonstrate the occurrence of this opposite-channel based charge injection. The experimental results are in agreement with PISCES numerical simulations.< >