Details

Autor(en) / Beteiligte

• Jarašiūnas, K.
• Aleksiejūnas, R.
• Malinauskas, T.
• Sūdžius, M.
• Miasojedovas, S.
• Juršėnas, S.
• Žukauskas, A.
• Gaska, R.
• Zhang, J.
• Shur, M. S.
• Yang, J. W.
• Kuokštis, E.
• Khan, M. A.

Titel

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

Ist Teil von

• Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.820-823

Ort / Verlag

Berlin: WILEY-VCH Verlag

Erscheinungsjahr

2005

Quelle

Wiley(RISS)

Beschreibungen/Notizen

• Time‐resolved four‐wave mixing and photoluminescence techniques have been combined for studies of MOCVD‐grown InxGa1–xN/GaN/sapphire heterostructures with different indium content (0.08 < x < 0.15). In‐plane diffusion and recombination of spatially‐modulated carriers, confined in the front layer of 50‐nm‐thick InGaN, were monitored by a probe beam diffraction and provided an average value of a bipolar diffusion coefficient D ≈ 1–1.5 cm2/s and its dependence on the In content. A complete saturation of four‐wave mixing (FWM) efficiency vs excitation energy was found prominent in a layer with 10% of In. The latter effect of saturation correlated well with the dependence of quantum efficiency of stimulated emission on In content in heterostructures. Short decay times of stimulated emission (∼10 ps) measured by time‐resolved PL in highly excited structure allowed us to attribute the FWM saturation effect to the threshold of stimulated recombination. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)