IEEE microwave and wireless components letters, 2004-10, Vol.14 (10), p.481-483
2004
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Details
- Autor(en) / Beteiligte
- Titel
- Modified class-F distributed amplifier
- Ist Teil von
- IEEE microwave and wireless components letters, 2004-10, Vol.14 (10), p.481-483
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2004
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- The class-F power amplifier is known for its high efficiency. The class-F single-ended dual-fed distributed amplifier integrates both class-F amplification and efficient power combining in the one circuit, without using additional n-way power combiners. In this letter the earlier reported circuit topology and design method is modified to account for drain parasitic reactances. A 1.8-GHz amplifier employing two packaged field effect transistors was designed and tested. The measured drain dc efficiency and corresponding output power with an input generator available power of 14 dBm was 71% and 22dBm, respectively.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1531-1309, 2771-957XeISSN: 1558-1764, 2771-9588DOI: 10.1109/LMWC.2004.834570Titel-ID: cdi_proquest_miscellaneous_28389897
- Format
- –
- Schlagworte
- Amplification, Amplifiers, Applied sciences, Circuit properties, Circuit testing, Circuit topology, Circuits, Design methodology, Direct current, Distributed amplifiers, Drains, Electric, optical and optoelectronic circuits, Electronic circuits, Electronics, Exact sciences and technology, FETs, Frequency filters, High power amplifiers, Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits, Microwaves, Packaging, Power combiners, Power generation, Power measurement