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Low voltage performance of a microwave CMOS Gilbert cell mixer
Ist Teil von
IEEE journal of solid-state circuits, 1997-07, Vol.32 (7), p.1151-1155
Ort / Verlag
IEEE
Erscheinungsjahr
1997
Quelle
IEEE Xplore
Beschreibungen/Notizen
This paper demonstrates the low voltage operation of a doubly balanced Gilbert mixer fabricated in a 0.8-/spl mu/m CMOS process and operating as both a down-converter and an up-converter. As a down-converter with an RF input of 1.9 GHz, the mixer has a single sideband noise figure as low as 7.8 dB and achieved down-conversion gain for supply voltages as low as 1.8 V. As an up-converter, the mixer demonstrates 10 dB of conversion gain at an RF frequency of 2.4 GHz with an applied local oscillator (LO) power of -7 dBm and LO-RF/LO-IF isolation of at least 30 dB. Up-conversion gain was achieved over a 5-GHz bandwidth and at supply voltages as low as 1.5 V. The mixer presented demonstrates the lowest single side band noise figure for a CMOS doubly balanced down-converting mixer and the highest frequency of operation for a mixer fabricated in CMOS technology to date.