Details

Autor(en) / Beteiligte

• Koh, G.H.
• Kim, H.J.
• Jeong, W.C.
• Oh, J.H.
• Park, J.H.
• Lee, S.Y.
• Jeong, G.T.
• Hwang, I.J.
• Kim, T.W.
• Lee, J.E.
• Park, S.O.
• Jeong, U.I.
• Jeong, H.S.
• Kim, Kinam

Titel

Fabrication of high performance 64 kb MRAM

Ist Teil von

• Journal of magnetism and magnetic materials, 2004-05, Vol.272, p.1941-1942

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2004

Link zum Volltext

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• We have demonstrated fully integrated 64 kb magnetoresistive random access memories (MRAM) with 0.24 μm CMOS technology. With the proper control of magnetic tunnel junction (MTJ) and subsequent process, we obtained tunneling magnetoresistive characteristics free of electrical shorting and we could minimize the degradation of MTJ. We confirmed MRAM operation without fail bit increase for write pulse width down to 6 ns. We confirmed the endurance of 64 kb MRAM up to 10 8 read/write cycles.