IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.114-116
2005
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- Autor(en) / Beteiligte
- Titel
- RF properties of overdamped SIS junctions
- Ist Teil von
- IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.114-116
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2005
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- A new type of nonhysteretic Josephson junction suitable for applications in voltage metrology has been developed. These junctions derive from the Nb/Al-AlO/sub x//Nb SIS junctions using a relatively thick Al layer oxidized at a low value of oxygen exposure. This produces junctions with reproducible and spatially homogeneous I-V characteristics, having current densities ranging from 10/sup 3/ to more than 2/spl times/10/sup 4/ A/cm/sup 2/ and characteristic voltages up to 0.40 mV. The authors report here the rf response of these junctions at 70 GHz. The authors have measured the dependence of the rf-induced steps on the microwave power and the stability of the steps, in view of a future application of these junctions to an AC Josephson voltage standard.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1051-8223eISSN: 1558-2515DOI: 10.1109/TASC.2005.849707Titel-ID: cdi_proquest_miscellaneous_28094041
- Format
- –
- Schlagworte
- Aluminum, Applied sciences, Circuit properties, Compound structure devices, Current density, Electric potential, Electric, optical and optoelectronic circuits, Electronic circuits, Electronics, Exact sciences and technology, Josephson junctions, Measurement standards, Metrology, Microwave measurements, Microwaves, Niobium, Power measurement, Radio frequency, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Signal convertors, Stability, superconducting devices, Superconductivity, Voltage, voltage standard