IEEE transactions on nanotechnology, 2005-03, Vol.4 (2), p.260-268
2005
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Details
- Autor(en) / Beteiligte
- Titel
- A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation
- Ist Teil von
- IEEE transactions on nanotechnology, 2005-03, Vol.4 (2), p.260-268
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2005
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- In this paper, we present the unique features exhibited by a modified asymmetrical double-gate (DG) silicon-on-insulator (SOI) MOSFET. The proposed structure is similar to that of the asymmetrical DG SOI MOSFET with the exception that the front gate consists of two materials. The resulting modified structure, i.e., a dual-material double-gate (DMDG) SOI MOSFET, exhibits significantly reduced short-channel effects (SCEs) when compared with the DG SOI MOSFET. SCEs in this structure have been studied by developing an analytical model. The model includes the calculation of the surface potential, electric field, threshold voltage, and drain-induced barrier lowering. A model for the drain current, transconductance, drain conductance, and voltage gain is also discussed. It is seen that SCEs in this structure are suppressed because of the perceivable step in the surface-potential profile, which screens the drain potential. We further demonstrate that the proposed DMDG structure provides a simultaneous increase in the transconductance and a decrease in the drain conductance when compared with the DG structure. The results predicted by the model are compared with those obtained by two-dimensional simulation to verify the accuracy of the proposed analytical model.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1536-125XeISSN: 1941-0085DOI: 10.1109/TNANO.2004.837845Titel-ID: cdi_proquest_miscellaneous_28065125
- Format
- –
- Schlagworte
- Analytical models, Applied sciences, Asymmetry, CMOS technology, Computer simulation, Conducting materials, Double gate (DG), drain-induced barrier lowering (DIBL), Drains, dual-material gate (DMG), Electric potential, Electronics, Exact sciences and technology, IV model, Mathematical analysis, Mathematical models, Molecular electronics, nanoelectronics, MOSFET circuits, MOSFETs, Nanostructure, Predictive models, Semiconductor device modeling, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Silicon on insulator technology, silicon-on-insulator (SOI) MOSFET, Studies, Threshold voltage, Transconductance, Transistors, Two dimensional displays, two-dimensional (2-D) modeling