Details

Autor(en) / Beteiligte

• Choi, Jong Hyun
• Kim, Do Young
• Park, Seong Jin
• Choo, Byoung Kwon
• Jang, Jin

Titel

Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization

Ist Teil von

• Thin solid films, 2003-03, Vol.427 (1), p.289-293

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2003

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We studied the growth of super-grain polycrystalline silicon by silicide mediated crystallization of amorphous silicon (a-Si) using a pulsed rapid thermal annealing (RTA). The Ni particles of 4.6×10 12 cm −2 were scattered onto the a-Si and then heated at various temperatures in the RTA system. The grain size was found to decrease from 41 to 26 μm with increasing crystallization temperature from 650 to 750 °C. The formation of nuclei and the grain growth rate from the nuclei have been investigated as a function of temperature. The density of NiSi 2 nuclei increases from 9.47×10 4 to 1.89×10 5 cm −2 as crystallization temperature increases from 650 to 750 °C. The grain growth velocity from the nuclei was found to be 8.6×10 −5 cm s −1 at 750 °C.