Details

Autor(en) / Beteiligte

• Li, B. S.
• Liu, Y. C.
• Zhi, Z. Z.
• Shen, D. Z.
• Lu, Y. M.
• Zhang, J. Y.
• Fan, X. W.
• Mu, R. X.
• Henderson, Don O.

Titel

Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films

Ist Teil von

• Journal of materials research, 2003-01, Vol.18 (1), p.8-13

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2003

Quelle

SpringerLink_现刊

Beschreibungen/Notizen

• In this paper, we report a simple method for preparing p-type ZnO thin films by thermal oxidization of Zn3N2 thin films. The Zn3N2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C2H5)2 and NH3 gas mixture. The Zn3N2 film with a cubic antibixbyite structure transformed to ZnO:N with a hexagonal structure as the annealing temperature reached 500 °C. When the annealing temperature reached 700 °C, a high-quality p-type ZnO film with a carrier density of 4.16 × 1017 cm−3 was obtained, for which the film showed a strong near-band-edge emission at 3.30 eV without deep-level emission, and the full width at half-maximum of the photoluminescence spectrum was 120 meV at room temperature. The origin of the ultraviolet band was the overlap of free exciton and the bound exciton. The N concentration was as high as 1021 cm−3, which could be controlled by adjusting the parameters of the annealing processes.