Details

Autor(en) / Beteiligte

• Zhang, Congcong
• Tu, Teng
• Wang, Jingyue
• Zhu, Yongchao
• Tan, Congwei
• Chen, Liang
• Wu, Mei
• Zhu, Ruixue
• Liu, Yizhou
• Fu, Huixia
• Yu, Jia
• Zhang, Yichi
• Cong, Xuzhong
• Zhou, Xuehan
• Zhao, Jiaji
• Li, Tianran
• Liao, Zhimin
• Wu, Xiaosong
• Lai, Keji
• Yan, Binghai
• Gao, Peng
• Huang, Qianqian
• Xu, Hai
• Hu, Huiping
• Liu, Hongtao
• Yin, Jianbo
• Peng, Hailin

Titel

Single-crystalline van der Waals layered dielectric with high dielectric constant

Ist Teil von

• Nature materials, 2023-07, Vol.22 (7), p.832-837

Ort / Verlag

England: Nature Publishing Group

Erscheinungsjahr

2023

Quelle

Nature Journals Online

Beschreibungen/Notizen

• The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel . For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration . However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant (κ) dielectric with an atomically flat and dangling-bond-free surface . Here, we report a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi SeO . The centimetre-scale single crystal of Bi SeO can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm and as thin as monolayer. With these Bi SeO nanosheets as dielectric and encapsulation layers, 2D materials such as Bi O Se, MoS and graphene show improved electronic performances. For example, in 2D Bi O Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm  V  s at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.