Details

Autor(en) / Beteiligte

• Koo, Yeonjeong
• Lee, Hyeongwoo
• Ivanova, Tatiana
• Savelev, Roman S.
• Petrov, Mihail I.
• Kravtsov, Vasily
• Park, Kyoung-Duck

Titel

Nanocavity-Integrated van der Waals Heterobilayers for Nano-excitonic Transistor

Ist Teil von

• ACS nano, 2023-03, Vol.17 (5), p.4854-4861

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Optical computing with optical transistors has emerged as a possible solution to the exponentially growing computational workloads, yet an on-chip nano-optical modulation remains a challenge due to the intrinsically noninteracting nature of photons in addition to the diffraction limit. Here, we present an all-optical approach toward nano-excitonic transistors using an atomically thin WSe2/Mo0.5W0.5Se2 heterobilayer inside a plasmonic tip-based nanocavity. Through optical wavefront shaping, we selectively modulate tip-enhanced photoluminescence (TEPL) responses of intra- and interlayer excitons in a ∼25 nm2 area, demonstrating the enabling concept of an ultrathin 2-bit nano-excitonic transistor. We suggest a simple theoretical model describing the underlying adaptive TEPL modulation mechanism, which relies on the additional spatial degree of freedom provided by the presence of the plasmonic tip. Furthermore, we experimentally demonstrate a concept of a 2-trit nano-excitonic transistor, which can provide a technical basis for processing the massive amounts of data generated by emerging artificial intelligence technologies.