Details

Autor(en) / Beteiligte

• Yoon, S-G
• Kim, H
• Kim, G-Y
• Kim, M-J
• Lee, H-M
• Lee, S-H
• Hwangbo, C-K
• Yoon, D-H
• WCA

Titel

CHARACTERISTICS ANALYSIS AND MANUFACTURE OF Ta2O5 THIN FILMS PREPARED BY DUAL ION-BEAM SPUTTERING DEPOSITION WITH CHANGE OF Ar/O2 GAS FLOW RATE OF ASSIST ION BEAM

Ist Teil von

• Hanʼguk Seramik Hakhoe chi, 2003-01, Vol.40 (12), p.1165-1169

Erscheinungsjahr

2003

Link zum Volltext

Beschreibungen/Notizen

• Ta2O5 thin film was deposited on Si-(111) and glass substrate with the change of Ar:O2 gas flow rate in the assist ion gun by the dual ion-beam sputtering (DIBS) method. As the O2 gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regard to O2 gas flow of the range 3-12 sccm in assist ion gun. The condition of Ar:O2 = 3:12 was the formatted stoichiometry composition of Ta2O5 and the rms roughness was small (0.183 nm). 13 refs.